Alpha Nanotech Prime-Grade DSP 4'' Silicon Wafers (P-Type, 525 um, 0.001-0.005 ohm cm) (Qty: 25)

Alpha Nanotech Prime-Grade DSP 4'' Silicon Wafers (P-Type, 525 um, 0.001-0.005 ohm cm) (Qty: 25)

Grade: Prime / CZ Virgin, Orientation: 100 Resistivity: 0.001 - 0.005 ohm cm Type/Dopant: P/Boron Front Surface: Polished, Back Surface: Polished TIR < 3 μm, TTV < 10 μm, BOW < 10 μm, Roughness < 0.5 nm Ultra-Flat Silicon Wafers

Prime/CZ Virgin Grade;
Orientation: ;
Resistivity: 1-30 Ω;
Type: P/Dopant: Boron;
TIR < 3 μm, TTV < 10 μm, BOW < 10 μm, Roughness < 0.5 nm;
Sizes Available:
Six Inch 6'' Wafer with a Thickness of 650 µm +/- 20 µm;
Four Inch 4'' Wafer with a Thickness of 525 µm +/- 20 µm;
Three Inch 3'' Wafer with a Thickness of 400 µm +/- 20 µm;
Two Inch 2'' Wafer with a Thickness of 300 µm +/- 15 µm;

Formats Available:
1 Piece in a Wafer Carrier;
10 Pieces in a Wafer Box;
25 Pieces in a Wafer Box;
Wafer carriers or wafer boxes are included for every single purchase.

We offer the ultra-flat silicon and silica wafers of the prime grade. These silicon and silica wafers are perfect for chemical deposition or cell growth while the 5mm x 5mm diced chips are ideal for direct AFM and SEM imaging. The silica substrates are silicon substrates uniformly coated with a 200 nm thermally grown SiO2 surface layer. Compared with the transitional chemical vapor deposition (CVD) method, the thermal oxidation provides a higher uniformity and a higher dielectric strength. Please visit https://www.amazon.com/dp/B07C1KPC92 for our listings for silica wafers.

For more information, please visit us at www.alphananotechne.com
or send us your questions to info@alphananotechne.com
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