Chanzon MJE340 TO-126 NPN Power BJT Bipolar Junction Transistor, High Voltage Resistance, Efficient Power Dissipation (Pack of 10pcs)

$6.99


Brand CHANZON
Merchant Amazon
Category Business & Industrial
Availability In Stock
SKU B08M3MRKK8
Size TO-126
Age Group ADULT
Condition NEW
Gender UNISEX
Material copper
Google Product Category Business & Industrial
Product Type Industrial & Scientific > Industrial Electrical > Semiconductor Products > Transistors > BJT

About this item

Chanzon MJE340 TO-126 NPN Power BJT Bipolar Junction Transistor, High Voltage Resistance, Efficient Power Dissipation (Pack of 10pcs)

Transistor Type: High Power NPN Bipolar Junction Transistor. Transistor Polarity: NPN Transistor, capable of handling high collector current and voltage. Specification: Capable to handle VCBO up to 300V, VCEO up to 300V, VEBO up to 3V, and IC up to 0.5A, with Power Dissipation PC of 20 W. Application: Perfect for a variety of electronic circuits, including power supplies, motor control and amplifiers. Complement to MJE350. Package: Comes in an anti-static bag that provides electrostatic protection, ESD safety and ensures long shelf life.

Silicon NPN Power Transistor MJE340 - A high voltage and general purpose transistor designed for robust performance and reliable operation. Key features include:

  • Collector-Emitter Sustaining Voltage (VCEO(SUS)): 300 V (Min) - Capable of withstanding high voltages in various applications.
  • DC Current Gain (hFE): 30 (Min) @ IC= 50mA - Ensures efficient current amplification for your circuit needs.
  • Low Collector Saturation Voltage (VCE(sat)): 1.0V (Max.) @ IC= 50mA - Minimizes power loss during operation.
  • Complement to the PNP MJE350 - Ideal for complementary circuit design.
  • Absolute Maximum Ratings:
    • Collector-Base Voltage (VCBO): 300 V
    • Emitter-Base Voltage (VEBO): 3 V
    • Continuous Collector Current (IC): 0.5 A
    • Collector Power Dissipation (PC) at 25°C: 20 W
  • Therermal Characteristics:
    • Thermal Resistance, Junction to Case (Rth j-c): 6.25 °C/W
  • Electrical Characteristics at TC=25°C:
    • Collector-Emitter Sustaining Voltage (VCEO(SUS)): 300 V
    • Collector-Base Breakdown Voltage (V(BR)CBO): 300 V
    • Emitter-Base Breakdown Voltage (V(BR)EBO): 3 V
    • Collector-Emitter Saturation Voltage (VCE(sat)): 1.0 V
    • Collector Cutoff Current (ICBO): 0.1 mA
    • Emitter Cutoff Current (IEBO): 0.1 mA
    • DC Current Gain Range (hFE): 30 to 240

Brand CHANZON
Merchant Amazon
Category Business & Industrial
Availability In Stock
SKU B08M3MRKK8
Size TO-126
Age Group ADULT
Condition NEW
Gender UNISEX
Material copper
Google Product Category Business & Industrial
Product Type Industrial & Scientific > Industrial Electrical > Semiconductor Products > Transistors > BJT

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