Chanzon 2SA1013 TO-92L PNP Power BJT Bipolar Junction Transistor (Pack of 50pcs)

Chanzon 2SA1013 TO-92L PNP Power BJT Bipolar Junction Transistor (Pack of 50pcs)

Transistor Type: PNP Power Bipolar Junction Transistor. Transistor Polarity: PNP Bipolar Junction Transistor. Specification: This 2SA1013 transistor can handle Pt of 0.9W, IC of 1A, VCBO of 160V, VCEO of 160V, VEBO of 6V, and a high frequency of 15MHz. Application: Commonly used in high-frequency applications, audio power amplifiers, and small signal switching. Package: Packaged in an anti-static bag, providing electrostatic protection, ESD safety, and a long shelf life.

Product Description

The 2SA1013 is a high-performance PNP Transistor encapsulated in a TO-92L package, designed for high voltage applications.

Key Features:

• High Voltage: -160V Collector-Emitter Voltage (VCEO)
• Large Continuous Collector Current: Up to 1A
• Complementary to 2SC2383, making it ideal for pair applications

Maximum Ratings:

• Collector-Base Voltage: -160V (VCBO)
• Emitter-Base Voltage: -6V (VEBO)
• Collector Power Dissipation: 0.9W (PC)
• Junction Temperature Range: -55 to +150°C (Tstg)

Electrical Characteristics:

• Collector-Base Breakdown Voltage: -160V (V(BR)CBO)
• Collector-Emitter Breakdown Voltage: -160V (V(BR)CEO)
• Emitter-Base Breakdown Voltage: -6V (V(BR)EBO)
• DC Current Gain: Ranges from 60 to 320 (hFE)
• Collector-Emitter Saturation Voltage: -1.5V (VCE(sat))
• Base-Emitter Voltage: -0.75V (VBE)
• Transition Frequency: 15MHz (fT)

Classification of hFE:

• Rank R: 60-120
• Rank O: 100-200
• Rank Y: 160-320

Pin Configuration: Emitter (1), Collector (2), Base (3)

Dimensions: Please refer to the datasheet for detailed dimensions in millimeters and inches.

This transistor is perfect for applications requiring high voltage and current capabilities, offering reliable performance in various electronic circuits.