Chanzon AO3401 SOT-23 PMOS MOS P-Channel Power MOSFET Transistor, Surface-Mounted Device (Pack of 100pcs)

Chanzon AO3401 SOT-23 PMOS MOS P-Channel Power MOSFET Transistor, Surface-Mounted Device (Pack of 100pcs)

Transistor Type: Power Metal-Oxide-Semiconductor Field-Effect Transistor (PMOS). Transistor Polarity: P-Channel MOSFET Transistor. Specification: Handles Power Dissipation (PD) of 1.4W, Drain Current (ID) of 4A, Drain-Source Voltage (VDSS) of 30V, and Drain-Source On-State Resistance (RDS(on)) of 0.085 Ω. Application: Versatile in various power switching and regulation circuits, offering efficient operation in compact design. Package: Securely packed in an anti-static bag offering electrostatic protection, ESD safety, and extensive shelf life.

Product Description:
This 30V P-Channel MOSFET is designed for high performance and versatility, making it ideal for a variety of applications including load switching and general use. With advanced trench technology, it offers an excellent RDS(ON), low gate charge, and operates efficiently at gate voltages as low as 2.5V.
Key Features:
- Maximum Drain-Source Voltage: 30V
- Continuous Drain Current (ID): -4.0A
- Gate-Source Voltage (VGS): -30V
- Junction and Storage Temperature Range: -55 to 150°C
- Thermal Characteristics: RθJA 70°C/W, RθJL 0.9°C/W
- Maximum Power Dissipation (PD): 1.4W at TA=25°C
- Turn-on Delay Time (td(on)): Typically 6.5ns
- Turn-Off Delay Time (td(off)): Typically 41ns
- Total Gate Charge (Qg): 14nC at VGS=-10V
- Body Diode Reverse Recovery Charge (Qrr): 3.5nC
- Maximum Body-Diode Continuous Current: -4.0A
- Input Capacitance (Ciss): 645pF
- Output Capacitance (Coss): 80pF
- Gate Resistance (Rg): 4 to 12Ω
Electrical Characteristics:
- Gate Threshold Voltage (VGS(th)): -0.9V
- On-state Drain Current (ID(ON)): -27A
- Static Drain-Source On-Resistance (RDS(ON)): < 50mΩ at VGS=-10V
- Forward Transconductance (gFS): 17S
- Diode Forward Voltage (VSD): -0.7 to -1V
Thermal and Switching Parameters:
- Maximum Junction-to-Ambient Thermal Resistance (RθJA): 125°C/W
- Maximum Junction-to-Lead Thermal Resistance (RθJL): 80°C/W
- Single Pulse Power Rating: Dependent on Junction-to-Ambient Thermal Resistance
- Maximum Forward Biased Safe Operating Area (SOA): As per Figure 9
Package Type: SOT23
This MOSFET is designed to meet the demands of high-efficiency and reliability in your electronic projects. For more detailed specifications and application guidance, please refer to the datasheet.