Chanzon BS170 TO-92 NMOS MOS N-Channel Power MOSFET Transistor (Pack of 10pcs)

Chanzon BS170 TO-92 NMOS MOS N-Channel Power MOSFET Transistor (Pack of 10pcs)

Transistor Type: N-Channel MOSFET Power Transistor. Transistor Configuration: NMOS configuration with TO-92 package. Specification: Efficient performance with power dissipation (PD) of 0.63W, drain current (ID) of 0.3A, and drain-source voltage (VDSS) of 60V. Application: Ideal for use in various electronic circuits for switching and power regulation purposes. Package: Delivered in an Anti-Static bag to ensure electrostatic protection, ESD safety, and long shelf life.

Product Description:
This N-Channel MOSFET is designed for applications requiring high efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current of 500mA, it is suitable for a variety of electronic circuits.
Key Features:
- Pb-Free Package Available*
- Maximum Ratings:
- Drain-Source Voltage (VDS): 60V
- Gate-Source Voltage (VGS): ±20V (continuous), ±40V (non-repetitive)
- Total Device Dissipation at 25°C: 350mW
- Operating and Storage Junction Temperature Range: -55°C to +150°C
Electrical Characteristics:
- Gate Threshold Voltage (VGS(Th)): 0.8V to 3.0V
- Static Drain-Source On Resistance (rDS(on)): Min 1.8Ω, Max 5.0Ω
- Forward Transconductance (gfs): Up to 200 mS
- Input Capacitance (Ciss): 60pF at 1.0MHz
Switching Characteristics:
- Turn-On Time (ton): 4.0ns to 10ns
- Turn-Off Time (toff): 4.0ns to 10ns
Ordering Information:
Available in TO-92 (TO-226) package, with options for Pb-Free and tape & reel packaging.
Technical Support:
For detailed specifications and application support, please refer to the datasheet.
*Pb-Free Package: Environmentally friendly option available.