Chanzon AOD4184A TO-252 NMOS MOS N-Channel Power MOSFET Transistor SMD (Pack of 10pcs)

Chanzon AOD4184A TO-252 NMOS MOS N-Channel Power MOSFET Transistor SMD (Pack of 10pcs)

Transistor Type: High Performance N-Channel Power MOSFET Transistor. Transistor Polarity: NMOS configuration for high-speed switching applications. Specification: Offering excellent power management with the ability to handle high-voltage applications. Application: Primarily used for efficient power conversion in a variety of electronics including power supplies, motor control systems, and audio amplifiers. Package: Safely packed in an Anti-Static bag for ESD protection and prolonged shelf life.

Product Description:
This 40V N-Channel MOSFET is designed for high current load applications, featuring advanced trench MOSFET technology and a low resistance package. It ensures extremely low RDS(ON) for efficient power management.
Key Features:
- Voltage Ratings:
- Drain-Source Voltage (VDS): 40V
- Gate-Source Voltage (VGS): ±20V
- Current Handling:
- Continuous Drain Current (ID): 50A at VGS=10V
- Pulsed Drain Current: Up to 120A
- Therapeutic Characteristics:
- Junction-to-Case Thermal Resistance (RθJC): ≤ 2.4°C/W
- Junction-to-Ambient Thermal Resistance (RθJA): 18°C/W (typical)
- Performance Metrics:
- On-State Drain-Source On-Resistance (RDS(ON)): < 7mΩ at VGS=10V
- Turn-On Delay Time (td(on)): Typically 6ns
- Turn-Off Fall Time (td(off)): Typically 30ns
- Static Parameters:
- Zero Gate Voltage Drain Current (IDSS): Up to 120μA
- Gate Threshold Voltage (VGS(th)): 1.7V to 2.6V
- Dynamic Parameters:
- Total Gate Charge (Qg): 21nC to 33nC at VGS=10V
- Body Diode Reverse Recovery Time: 20ns to 38ns
- Avalanche Capability:
- Avalanche Energy: Up to 61mJ
- Avalanche Current: 13A continuous
- Package Type: TO252 DPAK
- Storage Temperature: -55°C to 175°C