Juried Engineering ON Semiconductor/Fairchild PN2222A PN2222 2222 NPN, 40 V, 300 MHz, 625 mW, 1 A, 300 hFE Epitaxial Silicon Bipolar Transistors (Pack

Juried Engineering ON Semiconductor/Fairchild PN2222A PN2222 2222 NPN, 40 V, 300 MHz, 625 mW, 1 A, 300 hFE Epitaxial Silicon Bipolar Transistors (Pack

The PN2222ATA PN2222 is a NPN Transistor for general purpose power amplifier and switching applications. 200°C/W Thermal Resistance, Junction-to-Ambient. Transition Frequency ft 300MHz, 200°C/W Thermal Resistance, Junction-to-Ambient, Power Dissipation Pd 625mW DC Collector Current 1A, Operating Temperature Max 150°C DC Current Gain hFE 300hFE Transistor Case Style TO-92, No. of Pins 3Pins The PN2222ATA PN2222 is a NPN Transistor for general purpose power amplifier and switching applications. 200°C/W Thermal Resistance, Junction-to-Ambient.

The PN2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.